By Peter W. Hawkes
Advances in Imaging and Electron Physics merges long-running serials-Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy. This sequence gains prolonged articles at the physics of electron units (especially semiconductor devices), particle optics at low and high energies, microlithography, photograph technology and electronic snapshot processing, electromagnetic wave propagation, electron microscopy, and the computing tools utilized in these kinds of domain names
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Additional info for Advances in Imaging and Electron Physics, Vol. 147
For example, Silveira et al. (2004) used temperature-resolved CL to assign freeor bound-exciton emission identities to near-band-edge lines in AlN, and they SCANNING CATHODOLUMINESCENCE MICROSCOPY 41 F IGURE 22. Dislocations in a GaAs-based device, analyzed by temperature-resolved CL. (a) Panchromatic CL. (b) γ1 . (c) γ0 . (d) EA . (e) R N /R R . (f) γ0 exp(−EA /kT ). ) © 1996 American Institute of Physics. were able to determine the reduced effective mass [Eq. (10)] for the A exciton in aluminum nitride (AlN).
73 eV). Further, they illustrate a beam blanker and lock-in amplifier in their system that is usable with either the PMT or the Ge-PD. Although lock-in allows much weaker signals to be recorded, the acquisition times are greatly increased. A useful tool for CL spectroscopy is the charge-coupled device (CCD), which is a silicon chip consisting of an array of light-detecting pixels and is the type of detector used in a consumer digital camera. For infrared applications, it is possible to use InGaAs diode arrays in a similar manner.
The 5-keV case is omitted for clarity but would occupy only the p-side. reduction of the GaN peak at 30 keV may also be due, in part, to selfabsorption of the GaN peak. This example illustrates the primary application of voltage-resolved CL depth profiling. Similar results have been published by Godlewski et al. (2000, 2005) and Feng et al. (2003). Katona et al. (2004) used 3- to 10-keV CL to study defect distributions in high-Al content AlGaN and showed that a defect band centered at 448 nm was the dominant non-QW emission.
Advances in Imaging and Electron Physics, Vol. 147 by Peter W. Hawkes